The AT650/850P is a benchtop plasma atomic layer deposition (ALD) system featuring a thermal-based design. It is equipped with a new advanced hollow cathode source and 60 MHz radio frequency (RF), and offers advantages such as low oxygen contamination.
AT650/850P Cost effective, Desktop Plasma ALDThe AT650/850P is a benchtop plasma atomic layer deposition (ALD) system featuring a thermal-based design. It is equipped with a new advanced hollow cathode source and 60 MHz radio frequency (RF), and offers advantages such as low oxygen contamination.
Features
Small Footprint (38.1 cm; 15″ across) Desktop Plasma ALD
High efficiency, remote 300 watt hollow cathode source and 60 MHz RF generator
Features: low oxygen contamination, high electron density, low plasma damage
Integrated matching network
Accommodates samples of 6″ diameter with optional customizable chucks.
Warm walled aluminum chamber with heated sample holder from 40 – 400 °C (500 °C available)
4 organometallic precursors can be heated to 180 °C.
Up to 4 oxidant/reductant sources each with ultrafast MFCs (2 standard)
High temperature compatible fast pulsing ALD valves with an ultrafast MFC and
integrated inert gas purge
High exposure available with static processing mode AT650P
Specifications
Substrate temperatures from RT to 400 °C ± 1 °C (500 °C optional) ; Precursor temperatures from RT to 180 °C ± 2°C (w/ heating jacket)
Small footprint (15″ by 15″), bench top installation and fully cleanroom compatible
Simple system maintenance and low utilities cost.
Streamlined chamber design and small chamber volume
Fast cycling capability and high exposure, deep penetration processing available
Full HW and SW interlocks for safe operation even in multi-user environment.
Options
Customized chuck/platen
QCM (Quartz Crystal Microbalance)
Additional Counter reactant lines (MFC controlled) – up to 2 additional
Optional bubbler available with pressure boost technology
Load lock (or glove box integration)
External control – PC/software link (allows programming and running, remotely)
Higher than standard pressure regime
Facilities
For detailed instructions see our presentation and video instructions: “AT650P Installation and Start-up“
· N2 purge gas should be >99.9995% with a shutoff valve (regulated to 10 – 30 psi, metal sealed).
Input line is 1/4 female VCR compression fitting
Attach > 99.9995% nitrogen (UHP) purge gas via 1/4″ metal line to the 1/4″ compression fitting on back
Attach 90-110 psi CDA (clean dry air) via 1/4″ polyethylene tubing or metal line to the other 1/4″ compression fitting marked CDA (Clean Dry Air)
Min 19.5cfm wet pump (**PTFE vacuum fluid (like Fomblin) required) (Dry pump is optional)
NW40 (1.5″) connection and also exhaust line (with > 5cfm draw)
Greater than 1 meter should use NW50 exhaust line
Precursor’s attach via female VCR elbows (always use new gaskets).
Elbow: 1/4″ gasket first (with gloves on)
For precursor attachment please refer to “AT650P Tool and Software Operation”
Software
For detailed instructions see our presentation and video instructions: “AT650P Installation and Start-up“
Human Machine Interface (HMI) PLC system with a 10” touch screen
panel
Advanced controls suitable for the deposition of standard ALD cycles as well as e.g. Nanolaminates, Doped Thin Films and Ternary Thin Films
Recipe database for high quality, tested processes
Custom recipe input screen
Real time display of process status
Individually programmable heated source temperatures
Built-in pulsing sequences for ternary compounds and nano-laminates
Quick running with simple questions to get user going
Input subcycles and overall cycles
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