AT810 The AT810 is the most cost-effective thermal ALD tool on the market.

The AT810 Economical Atomic Layer Deposition (ALD) System is a benchtop system with a small footprint. It adopts semiconductor-grade metal-sealed pipelines and high-temperature compatible fast-pulse Atomic Layer Deposition (ALD) valves. It is equipped with an ultra-fast Mass Flow Controller (MFC) integrated with inert gas purging functionality. The system comes with a 6-inch circular chuck (supporting a maximum of 7-inch square samples) and can be customized to accommodate smaller-sized samples or samples of other shapes (with a height of 11 mm).

Small Footprint Desktop System

Semiconductor-grade metal sealed lines and high temperature compatible fast pulsing ALD valves.

Ultrafast MFC for integrated inert gas purge.

6 inch circular chuck (up to 7″ square) customizable for smaller sizes or other shapes (11 mm tall).

3 organometallic precursors and 2 (up to 3) counter reactants.

Heated lines throughout (from precursor to chamber).

All aluminum (semiconductor grade) chamber ‒ range up to 300°C

7” touchscreen PLC controller (no PC required).

 

Features

 

  • Small Footprint Desktop System, cleanroom compatible.

  • All aluminum (semiconductor grade) chamber ‒ range up to 300°C

  • High temperature semiconductor grade fast pulsing ALD valves with ultrafast MFC for integrated inert gas purge.

  • 8″ circular chuck customizable for smaller sizes or other shapes.

  • Streamlined chamber design and small chamber volume

  • 3 organometallic precursors and 2 (up to 3) counter reactants.

    • Precursors can be heated to 150°C.

  • Heated lines throughout (from precursor through to chamber).

  • Simple system maintenance and lowest utilities and precursor usage on market

  • High exposure (for trenches and porous substrates) and static processing mode

  • 7 ” touchscreen PLC controller (no PC required)

 

Specifications

 

  • Chamber temperatures from RT to 300°C ± 1°C

  • Precursor temperatures from RT to 150°C ± 2°C (w/ heating jacket)

  • Smallest footprint on market, bench top installation and cleanroom compatible

  • Simple system maintenance and lowest utilities and precursor usage on market

  • Streamlined chamber design and small chamber volume

  • Fast cycling capability and high exposure, deep penetration processing available

  • All metal sealed from precursor to chamber.

  • Typical Operating Pressure

  • Full HW and SW interlocks for safe operation in multi-user environment

  • 110 – 220 VAC, single phase, 50/60Hz, 15 Amp (10A for 220V)

  • Weight approximately 100lbs (45 kgs)

 

OPTIONS

 

  • Customized chuck/platen (square, indents for smaller pieces, powders)

  • Customized chamber (thicker substrates)

  • ATOzone – Ozone generator (required for some films: Pt, Ir, SiO2, MoO2, high quality Al2O3 below 60°C, high quality HfO2)2、MoO2high quality Al2O3 below 60°C2O3、high quality HfO22

    • Optional – Ozone Safety Monitor w real time detection of ambient ozone gas

  • QCM (Quartz Crystal Microbalance)

  • Glovebox integration (typically required to not expose substrate to moisture; Sulfides, etc..)

  • External control – PC/software link (allows programming and running, remotely)

  • Ventable Precursor cabinet

  • Spare Chamber

  • IGPA (inert gas pressure assist)for low vapor pressure precursors

  • Higher temperatures on precursors (to 180°C)

  • Third counter reactant

    • Software control of third counter reactant

 

Installation

 

      • For detailed instructions see our presentation and video instructions: “AT810 Installation and Start-up“

      • N2 purge gas should be >99.9995% with a shutoff valve (regulated to 10 – 30 psi, metal sealed), .

        • Input line is 1/4 female VCR compression fitting

        • Attach > 99.9995% nitrogen (UHP) purge gas via 1/4″ metal line to the 1/4″ compression fitting on back

      • Attach 90-110 psi CDA (clean dry air) via 1/4″ polyethylene tubing or metal line to the other 1/4″ compression fitting marked CDA (Clean Dry Air)

      • Min 19.5cfm wet pump (**PTFE vacuum fluid (like Fomblin) required)

        • NW25 (KF25) (1″) connection and also exhaust line (with > 5cfm draw)

        • Greater than 1 meter should use NW40 (1.5″) exhaust line

      • Precursor’s attach via female VCR elbows (always use new gaskets)

        • Elbow: 1/4″ gasket first (with gloves on)

      • For precursor attachment please refer to “AT810 Tool and Software Operation”.

 

Software

 

  • For detailed instructions see our presentation and video instructions: “AT810 Installation and Start-up“

    • Input subcycles and overall cycles

    • Human Machine Interface (HMI) PLC system with a 7” touch screen panel

    • Advanced controls suitable for the deposition of standard ALD cycles as well as e.g. Nanolaminates, Doped Thin Films and Ternary Thin Films

    • Recipe database for high quality, tested processes

    • Custom recipe input screen

    • Real time display of process status

    • Individually programmable heated source temperatures

    • Built-in pulsing sequences for ternary compounds and nano-laminates

    • Quick running with simple questions to get user going

 

 

 

Related Products

related news

contact us

我们希望了解您的需求,请填写以下表单并提交

Your Name
邮箱地址
联系电话
您的需求